G4MicroElecSiStructure.cc

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// G4MicroElecSiStructure.cc, 2011/08/29 A.Valentin, M. Raine
//
// Based on the following publications
//
//          - Inelastic cross-sections of low energy electrons in silicon
//      for the simulation of heavy ion tracks with theGeant4-DNA toolkit,
//      NSS Conf. Record 2010, pp. 80-85.
//      - Geant4 physics processes for microdosimetry simulation:
//      very low energy electromagnetic models for electrons in Si,
//      NIM B, vol. 288, pp. 66 - 73, 2012.
//      - Geant4 physics processes for microdosimetry simulation:
//      very low energy electromagnetic models for protons and
//      heavy ions in Si, NIM B, vol. 287, pp. 124 - 129, 2012.
//
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#include "G4MicroElecSiStructure.hh"
#include "G4SystemOfUnits.hh"
 
G4MicroElecSiStructure::G4MicroElecSiStructure(): nLevels(6)
{
  energyConstant.push_back(16.65*eV);
  energyConstant.push_back(6.52*eV); 
  energyConstant.push_back(13.63*eV);
  energyConstant.push_back(107.98*eV); 
  energyConstant.push_back(151.55*eV); 
  energyConstant.push_back(1828.5*eV);
 
  nLevels = (G4int)energyConstant.size();
}
 
G4double G4MicroElecSiStructure::Energy(G4int level)
{
  G4double energ = 0.;
 
  if(level >= 0 && level < nLevels)
  {
    energ = energyConstant[level];
  }
 
  return energ;
}