G4MicroElecSiStructure.hh

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// G4MicroElecSiStructure.hh, 2011/08/29 A.Valentin, M. Raine
//
// Based on the following publications
//
//          - Inelastic cross-sections of low energy electrons in silicon
//      for the simulation of heavy ion tracks with theGeant4-DNA toolkit,
//      NSS Conf. Record 2010, pp. 80-85
//      - Geant4 physics processes for microdosimetry simulation:
//      very low energy electromagnetic models for electrons in Si,
//      NIM B, vol. 288, pp. 66-73, 2012.
//      - Geant4 physics processes for microdosimetry simulation:
//      very low energy electromagnetic models for protons and
//      heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012.
//
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#ifndef G4MICROELECSISTRUCTURE_HH
#define G4MICROELECSISTRUCTURE_HH 1
 
#include "globals.hh"
#include <vector>
 
 
class G4MicroElecSiStructure
{
public:
  
  G4MicroElecSiStructure();
  
  virtual ~G4MicroElecSiStructure() = default;
  
  G4double Energy(G4int level);
 
  G4int NumberOfLevels() { return nLevels; }
  
    
private:
   
 // Number of levels of silicon
 G4int nLevels;
 
  std::vector<G4double> energyConstant;
  
};
 
#endif